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Proceedings Paper

Photo-emitters based on field and optically induced electron emission
Author(s): Jadwiga Olesik
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Paper Abstract

Electron emission properties of doped In203 and Sn02 (ITO) thin layers have been studied. These layers have been deposited onto both surfaces of a microscope glass using a constant-current ion sputtering method. One of the layer (1 μm thick) was a field electrode and another one (1Onm - 200nm) was treated as an electron emitter. The layers were examined using an electron emission induced by electric field. The polarizing voltage Upol has been applied to the field electrode. The studies has been carried out in vacuum (1O-7 hPa). Electron emission yield dependence on the intensity of an internal field and illumination were measured. The exponential dependence of the pulse frequency n =f(Upol) has been found. With increasing Upol (field strength in a sample) and after illumination the count frequency of pulses grows monotonically. At low Upol (≤|-500V|) the increase is linear. At higher Upol this dependence is exponential. Energy analysis of emitted electrons was performed by the retarding field method. Measurements of electrons energy in field induced emission showed that about 80% of electrons have energy up to 10 eV. It was also found that additional effect at simultaneous emission oftwo electrons as result ofabsorption of a single photon have to be taken into account.

Paper Details

Date Published: 29 August 2002
PDF: 9 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481043
Show Author Affiliations
Jadwiga Olesik, Pedagogical Univ. of Czestochowa (Poland)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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