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Proceedings Paper

Preparation of nanocrystalline silicon films by excimer-laser-induced crystallization
Author(s): Guangsheng Fu; Wei Yu; She Qiang Li; Ying Cai Peng; Li Han
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Paper Abstract

Excimer laser-induced crystallization (ELC) technique has been used to prepare nanocrystal silicon (nc-Si) from amorphous silicon (a-Si) thin films on silicon or glass substrate. The a-Si films without hydrogen grown by pulsed laser deposition (PLD) are chosen as precursor to avoid the problem of hydrogen effluence during annealing. The analysis has been performed by scanning electron microscopy (SEM), Raman scattering spectroscopy and high-resolution transmission electron microscopy (HRTEM). Experimental results show that the silicon nanocrystals can be formed by laser annealing. The growth characters of nc-Si are strongly dependent on the laser energy density. It is shown that the volume of melted Si essentially predominates the grain size of nc-Si, and the surface tension of crystallized silicon is responsible for the mechanism of nc-Si growth

Paper Details

Date Published: 29 August 2002
PDF: 4 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481038
Show Author Affiliations
Guangsheng Fu, Hebei Univ. (China)
Wei Yu, Hebei Univ. (China)
She Qiang Li, Hebei Univ. (China)
Ying Cai Peng, Hebei Univ. (China)
Li Han, Hebei Univ. (China)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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