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Proceedings Paper

P-channel MODFET as an optoelectronic detector
Author(s): Hwe-Jong Kim; Dong Myong Kim; Il Ki Han; Won Jun Choi; Jacques Zimmermann; Jung Il Lee
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Paper Abstract

Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical illumination is explained. The results show power law relation between the current variation and the optical intensity. Near-threshold region in saturation region is found to be most sensitive to the optical intensity variation

Paper Details

Date Published: 29 August 2002
PDF: 9 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481019
Show Author Affiliations
Hwe-Jong Kim, Korea Institute of Science and Technology (South Korea)
Dong Myong Kim, Kookmin Univ. (South Korea)
Il Ki Han, Korea Institute of Science and Technology (South Korea)
Won Jun Choi, Korea Institute of Science and Technology (South Korea)
Jacques Zimmermann, IMEP-INPG-CNRS (France)
Jung Il Lee, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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