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Proceedings Paper

InGaAs-Si avalanche photodiodes fabricated by wafer bonding
Author(s): Zhong Pan; Martin Bitter; Alexandre Pauchard; Steve Hummel; Tao Feng; Yimin Kang; Phil Mages; Paul K. L. Yu; Yu-Hwa Lo
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Paper Abstract

We report here on wafer-bonded InGaAs/Si avalanche photodiodes (APDs) demonstrating very low excess noise factors that were fabricated using a high-yield, wafer-scale bonding process. The bonding interface quality was evaluated using high-resolution x-ray diffraction and dark current measurements. Measured dark currents on 20 μm diameter mesas are 25 nA and 170 nA at gains of 10 and 50, respectively. Low excess noise factors, which are predicted due to the superior noise properties of Si as a multiplication layer, were measured to be more than 3 times lower than commercial InGaAs/InP APDs at a gain of 10, and more than 9 times lower at a gain of 50. The corresponding electron/hole ionization coefficient ratio k in these devices is as low as 0.02.

Paper Details

Date Published: 29 August 2002
PDF: 4 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481018
Show Author Affiliations
Zhong Pan, Nova Crystals, Inc. (United States)
Martin Bitter, Nova Crystals, Inc. (United States)
Alexandre Pauchard, Nova Crystals, Inc. (United States)
Steve Hummel, Nova Crystals, Inc. (United States)
Tao Feng, Nova Crystals, Inc. (United States)
Yimin Kang, Univ. of California/San Diego (United States)
Phil Mages, Univ. of California/San Diego (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)
Yu-Hwa Lo, Nova Crystals, Inc. and Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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