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Proceedings Paper

Quantum-dot semiconductor optical amplifiers
Author(s): Mitsuru Sugawara; T. Akiyama; N. Hatori; Yoshiaki Nakata; K. Otsubo; Hiroji Ebe
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Paper Abstract

This paper provides prospects and current status of quantum-dot semiconductor optical amplifiers (SOAs) and their comparison with bulk and quantum-well technology, based on our pioneering work covering the proposal of their promising features, subsequent experimental demonstrations, and the design of all-optical quantum-dot switching modules. The proposed promising features are diverse; high-saturation power, high-speed amplification up to 160 Gb/s under gain saturation without pattern effect, high-speed cross-gain modulation up to 160 Gb/s without pattern effect, multiple-wavelength processing over broad gain spectra, and symmetric wavelength conversion by four-wave mixing. The operation theory of quantum-dot SOAs is provided in order to treat various aspects unique to quantum dots such as spatial localization, retarded carrier relaxation, and inhomogeneous and homogeneous broadening. Pattern-effect-free amplification at 10-40Gb/s, wavelength conversion by the cross-gain modulation at 10-40Gb/s, and symmetric wavelength conversion by four-wave mixing are experimentally demonstrated in 1.3-micron InGaAs/GaAs quantum-dot SOAs. All-optical quantum-dot switching modules are proposed, which we expect to work in the next-generation flexible all-optical photonic networks.

Paper Details

Date Published: 29 August 2002
PDF: 17 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481011
Show Author Affiliations
Mitsuru Sugawara, Fujitsu Labs. Ltd. (Japan)
T. Akiyama, Fujitsu Labs. Ltd. and Fujitsu (Japan)
N. Hatori, Fujitsu Labs. Ltd. (Japan)
Yoshiaki Nakata, Fujitsu Labs. Ltd. and Fujitsu (Japan)
K. Otsubo, Fujitsu Labs. Ltd. and Fujitsu (Japan)
Hiroji Ebe, Fujitsu Labs. Ltd. (Japan)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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