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Proceedings Paper

Low-threshold InGaAsP laser with etched facets by inductively coupled plasma
Author(s): Jian Wang; Bing Xiong; Changzheng Sun; Zhi-Biao Hao; Yi Luo
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Paper Abstract

Low threshold semiconductor lasers with etched facets have been fabricated by inductively coupled plasma (ICP) dry etching technology. To ensure vertical and smooth etched-facets, a novel C12/CH4/Ar mixture has been adopted for the ICP etching process. The typical threshold current of etched-facet lasers is about 1 8 mA, which is as low as that of lasers with cleaved-facets and similar cavity length.

Paper Details

Date Published: 29 August 2002
PDF: 3 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481008
Show Author Affiliations
Jian Wang, Tsinghua Univ. (China)
Bing Xiong, Tsinghua Univ. (China)
Changzheng Sun, Tsinghua Univ. (China)
Zhi-Biao Hao, Tsinghua Univ. (China)
Yi Luo, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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