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Proceedings Paper

High-linearity and -power 1.3-um AlGaInAs strained MQW DFB-LD
Author(s): Kun Shen; Ren-Fan Wang; Ai-Wen Yue; Hong-Tao Yang; Shi-Bin Fan
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Paper Abstract

AlGaInAs/InP strained MQW reversed-mesa RWG structure is proposed to reduce leakage current and improve linearity, and applied to make high linearity and high power 1.3μm DFB-LD. For 1.3μm AlGaInAs strained MQW DFB LD, the lasers operated with 10mA threshold current, 0.48mW/mA slope efficiency for one facet, 45dB SMSR. The -3dB cutoff frequency is 14GHz, and the eye pattern is opened widely at 10Gb/s. Under PAL 59 channels test, output power exceeds 15mW with COS<-69.4dBc, CTB<-69.4dBc, CNR<-52dB, which is the first reported RWG 1.3μm DFB-LD for optical CATV application. This implies that AlGaInAs/InP strained MQW reversed-mesa RWG structure could effectively reduce leakage current.

Paper Details

Date Published: 29 August 2002
PDF: 5 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481007
Show Author Affiliations
Kun Shen, Wuhan Telecommunication Devices Co. (China)
Ren-Fan Wang, Wuhan Telecommunication Devices Co. (China)
Ai-Wen Yue, Wuhan Telecommunication Devices Co. (China)
Hong-Tao Yang, Wuhan Telecommunication Devices Co. (China)
Shi-Bin Fan, Wuhan Telecommunication Devices Co. (China)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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