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Proceedings Paper

Novel approaches to semiconductor lasers
Author(s): Nikolai N. Ledentsov; Vitaly A. Shchukin
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Paper Abstract

Modern trends in design of semiconductor lasers are reviewed. In one novel design, light propagates at some angle with respect to multilayer interference mirrors (MIRs), and the MIRs and the cavity are optimized for the tilted photon propagation. "Tilted cavity" laser (TCL) gives wavelength-stabilized operation in edge and (or) in surface direction and does not require materials having large difference in refractive indices. In a different concept, a high-order mode filtering in structures with periodically modulated refractive index containing a "defect" allows realization of a stable narrow beam divergence fundamental mode lasing in both edge-emitters and vertical-cavity surface-emitting lasers (VCSELs). Using of electrooptical modulators based on quantum confined Stark effect in VCSELs and TCLs allows a significant wavelength tuning range, ultrahigh-speed operation and direct wavelength adjustment to resonant cavity photodiode (RCPD) or tunable RCPD. Different types of tunable semiconductor optical amplifiers, switches, filers may become possible. New generations of cost-effective intelligent telecom systems with direct, ultrafast and wavelength adjustable connection between consumer devices and the storage or processing cites may be realized.

Paper Details

Date Published: 29 August 2002
PDF: 13 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481006
Show Author Affiliations
Nikolai N. Ledentsov, Technische Univ. Berlin (Germany)
Vitaly A. Shchukin, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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