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Proceedings Paper

Influence of rapid-thermal-annealing-induced cracks on multiple quantum-well laser diode performance
Author(s): Hoshin H. Yee; Tao-Wei Chou; Chun-Hung Lai; Chia-Hsuan Lin; Meng-Shian Lin; Cheng-Yu Chen
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Paper Abstract

The influence of high-temperature (>870°C) rapid-thermal-annealing (RTA) induced cracks on the laser performance fabricated with GaAs-AlGaAs quantum-well microstructures is reported. The effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO2 or SrF2 layers. The results show clearly that the density of surface cracks strongly depend on the atomic interdiffusion between the well and the barrier layers, and on the quality of the dielectric caps as well. In addition to the detailed analysis of the cracking effects on the laser performance, an effective way of reducing the density of RTA-induced cracks was also explored for the dielectrics grown by plasma-enhanced chemical vapor deposition under a low-stressed condition.

Paper Details

Date Published: 29 August 2002
PDF: 10 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481005
Show Author Affiliations
Hoshin H. Yee, National Taipei Univ. of Technology (Taiwan)
Tao-Wei Chou, National Taipei Univ. of Technology (Taiwan)
Chun-Hung Lai, National Taipei Univ. of Technology (Taiwan)
Chia-Hsuan Lin, National Taipei Univ. of Technology (Taiwan)
Meng-Shian Lin, National Taipei Univ. of Technology (Taiwan)
Cheng-Yu Chen, National Taipei Univ. of Technology (Taiwan)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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