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Proceedings Paper

Temperature-insensitive high-efficiency LDs for over 85C uncooled operation
Author(s): Yoshihiro Sasaki; Shotarou Kitamura; Shinya Sudo; Akihiro Itoh; Takashi Matsumoto; Tetsu Yoshizawa; Hidenori Kato; Keirou Komatsu
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Paper Abstract

We have developed temperature insensitive high-efficiency LDs that can operate at wavelengths around 1.3 um for TOSA (Transmitter Optical Sub-Assembly) modules, which are our proposed light source solution for compact transmitters. Since the modules should be used without temperature controllers, a high slope efficiency and high output power operation at over 85degC is essential for LDs. We eliminated the leakage current flowing outside of the active layer using a buried-hetero structure. This resulted in excellent lasing characteristics. The slope efficiency at 25degC and 85degC was 0.49 W/A and 0.38 W/A, respectively. The slope efficiency degradation defined as a ratio of the slope efficiency value at 85degC to that at 25degC was -1.1dB, which to our knowledge is a record value to be reported for practical InGaAsP DH LDs. Excellent uniformity and reproducibility for lasing characteristics of 85degC were verified through multiple wafer runs. The fairly stable long-term operation test of ASM LDs was performed and estimated MTF (Median Time to Failure) at 85degC-10mW conditions was over 1 x 105 hours. Using newly developed ASM LDs, we have assembled the world smallest TOSA modules that could be realized for suitable light source solution under severe ambient temperature conditions.

Paper Details

Date Published: 29 August 2002
PDF: 8 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.481004
Show Author Affiliations
Yoshihiro Sasaki, NEC Compound Semiconductor Devices, Ltd. (Japan)
Shotarou Kitamura, NEC Compound Semiconductor Devices, Ltd. (Japan)
Shinya Sudo, NEC Compound Semiconductor Devices, Ltd. (Japan)
Akihiro Itoh, NEC Compound Semiconductor Devices, Ltd. (Japan)
Takashi Matsumoto, NEC Compound Semiconductor Devices, Ltd. (Japan)
Tetsu Yoshizawa, NEC Compound Semiconductor Devices, Ltd. (Japan)
Hidenori Kato, NEC Compound Semiconductor Devices, Ltd. (Japan)
Keirou Komatsu, NEC Compound Semiconductor Devices, Ltd. (Japan)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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