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Proceedings Paper

Low-threshold DFB-laser-integrated high-speed EA modulators based on ridge waveguide structure by ICP etching
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Paper Abstract

Inductively coupled plasma (ICP) dry etching technique has been adopted to form narrow high-mesa ridge waveguide structure in a high-speed integrated EA modulator. A 3dBe bandwidth of over 12 GHz has been achieved without the use of polyimide in the DFB laser integrated EA modulator. Meanwhile, integrated device with a threshold current as low as 12 mA has been demonstrated by optimization ofthe wavelength detuning.

Paper Details

Date Published: 29 August 2002
PDF: 4 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.480999
Show Author Affiliations
Bing Xiong, Tsinghua Univ. (China)
Changzheng Sun, Tsinghua Univ. (China)
Jian Wang, Tsinghua Univ. (China)
Zhi-Biao Hao, Tsinghua Univ. (China)
Yi Luo, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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