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Proceedings Paper

Low-divergence high-power 980-nm single-mode diode lasers with asymmetric epitaxial structure
Author(s): Wei Gao; Zuntu Xu; Alan Nelson; Kejian Luo; JunZuo Wan; Haiquan Yang; Lisen Cheng; Aland K. Chin
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Paper Abstract

A ridge-waveguide, InGaAs/GaAlAs/GaAs, 980 nm, pump laser-diode emitting more than 600 mW of kink-free power and a FWHM divergence angle less than 22 degrees using an asymmetric-waveguide structure is presented. No catastrophic optical-damage was observed on p-up mounted devices up to a quasi-CW output power of 2 Watts where the power was limited by thermal effects.

Paper Details

Date Published: 29 August 2002
PDF: 3 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.480997
Show Author Affiliations
Wei Gao, Axcel Photonics Inc. (United States)
Zuntu Xu, Axcel Photonics Inc. (United States)
Alan Nelson, Axcel Photonics Inc. (United States)
Kejian Luo, Axcel Photonics Inc. (United States)
JunZuo Wan, Axcel Photonics Inc. (United States)
Haiquan Yang, Axcel Photonics Inc. (United States)
Lisen Cheng, Axcel Photonics Inc. (United States)
Aland K. Chin, Axcel Photonics Inc. (United States)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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