Share Email Print
cover

Proceedings Paper

Turn-on delay of VCSEL and effect of carrier recombination
Author(s): Xiao-xia Zhang; Wei Pan; Yongzhi Liu; Jianguo Chen
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

It is well known that when the laser is turned on by increasing the device current from its initial value Jo to the above-threshold value J greater than Jth, stimulated recombination is delayed by td, the time during which the carrier population rises to its threshold value. On the besis ofthe rate equations for quantum well VCSEL, a closed expression describing the time evolution of the carrier density within the turn-on period of a VCSEL has been derived for the case that the Auger effect is considered with a term proportional to the cube ofthe carrier density. The theoretic results are simulated with Simulink of MATLAB software. As a result, an explicit analytical expression for the turn-on delay of the VCSEL has also been deduced. Since the turn-on delay is an important parameter of a semiconductor laser, intensified studies on this parameter have been carried out in the past years.

Paper Details

Date Published: 29 August 2002
PDF: 5 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.480967
Show Author Affiliations
Xiao-xia Zhang, Univ. of Electronic Science and Technology of China (China)
Wei Pan, Southwest Jiao Tong Univ. (China)
Yongzhi Liu, Univ. of Electronic Science and Technology of China (China)
Jianguo Chen, Sichuan Univ. (China)


Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

© SPIE. Terms of Use
Back to Top