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Proceedings Paper

Transient and static thermal behavior of high-power single-mode semiconductor lasers
Author(s): Martin Hai Hu; Xingsheng Liu; Chung-En Zah
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Paper Abstract

Transient and static thermal response of high power single-mode laser module has been simulated using finite element method (FEM). FEM modeling revealed the time constants of heat propagation in lateral direction and in vertical direction. The time constants calculated by FEM modeling in the microsecond scale and the sub-millisecond to millisecond scale were experimentally verified by a time-resolved far-field optical measurement and a transient forward-voltage measurement respectively. It is shown that the active region, semiconductor substrate and the solder-submount each contributes about 35%, 50% and 15% to the total static thermal resistance of the laser package.

Paper Details

Date Published: 29 August 2002
PDF: 5 pages
Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); doi: 10.1117/12.480966
Show Author Affiliations
Martin Hai Hu, Corning Inc. (United States)
Xingsheng Liu, Corning Inc. (United States)
Chung-En Zah, Corning Inc. (United States)

Published in SPIE Proceedings Vol. 4905:
Materials and Devices for Optical and Wireless Communications
Constance J. Chang-Hasnain; YuXing Xia; Kenichi Iga, Editor(s)

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