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Proceedings Paper

Effect of carrier screening on InGaAs MSM detector
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Paper Abstract

We report on temporal response measurements of InGaAs metal-semiconductor-metal photodetectors (MSM-PDs) under high-illumination conditions. The peak current efficiency of the MSM-PDs decreases as the optical pulse energy increases due to space-charge-screening effects. The screening effects begin to occur at an optical pulse energy as low as 1.0 pJ/pulse, as predicted by a recent two-dimensional model. The fall time and full width at half maximum of the impulse response increase as the optical pulse energy increases and decrease as the bias voltage increases. For optical pulse energies between 1.0 pJ and 100 pJ, the rise time displays a U-shaped behavior as the bias voltage increases. This may be associated with the shape of the electron velocity-field characteristic in conjunction with screening of the dark field by optically generated carriers.

Paper Details

Date Published: 25 July 2003
PDF: 8 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.480857
Show Author Affiliations
Hongen Shen, Army Research Lab. (United States)
Keith Aliberti, Army Research Lab. (United States)
Gerard Dang, Army Research Lab. (United States)
Michael Wraback, Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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