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Proceedings Paper

Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
Author(s): Rishabh Mehandru; Gerard Dang; Kelly Pui-Sze Ip; Suku Kim; Fan Ren; Stephen J. Pearton; William S. Hobson; John Lopata; Wayne H. Chang; H. Shen
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Paper Abstract

Finite difference analysis was used to determine the thermal characteristics of continuous wave (CW) 850 nm AlGaAs/GaAs implant-apertured vertical-cavity surface-emitting lasers. A novel flip-chip design was used to enhance the heat dissipation. The temperature rise in the active region can be maintained below 40 °C at 4 mW output power with 10 mA current bias. In contrast, the temperature rise reaches above 60 °C without flip-chip bonding. The transient-temperature during turn-on of a VCSEL was also investigated. The time needed for the device to reach the steady-state temperature was in the range of a few tenths of a milli-second, which is orders of magnitude larger than the electrical or optical switch time. Flip-chip bonding will reduce the shift of the wavelength, peak power, threshold current and slope efficiency during VCSEL operations.

Paper Details

Date Published: 25 July 2003
PDF: 9 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.480855
Show Author Affiliations
Rishabh Mehandru, Univ. of Florida (United States)
Gerard Dang, Univ. of Florida (United States)
Kelly Pui-Sze Ip, Univ. of Florida (United States)
Suku Kim, Univ. of Florida (United States)
Fan Ren, Univ. of Florida (United States)
Stephen J. Pearton, Univ. of Florida (United States)
William S. Hobson, Multiplex, Inc. (United States)
John Lopata, Multiplex, Inc. (United States)
Wayne H. Chang, U.S. Army Research Lab. (United States)
H. Shen, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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