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Proceedings Paper

Recombination mechanism in low-dimensional nitride semiconductors
Author(s): Yoichi Kawakami; Akio Kaneta; Koichi Okamoto; Tsutomu Inoue; Fuminori Satou; Yoshihito Narita; Fritz Henneberger; Giichi Marutsuki; Yukio Narukawa; Takashi Mukai; Shigeo Fujita
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Paper Abstract

Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa1-xN-based quantum structures.

Paper Details

Date Published: 25 July 2003
PDF: 14 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.480854
Show Author Affiliations
Yoichi Kawakami, Kyoto Univ. (Japan)
Akio Kaneta, Kyoto Univ. (Japan)
Koichi Okamoto, Kyoto Univ. (Japan)
Tsutomu Inoue, JASCO Corp. (Japan)
Fuminori Satou, JASCO Corp. (Japan)
Yoshihito Narita, JASCO Corp. (Japan)
Fritz Henneberger, Humboldt Univ. zu Berlin (Germany)
Giichi Marutsuki, Nichia Corp. (Japan)
Yukio Narukawa, Nichia Corp. (Japan)
Takashi Mukai, Nichia Corp. (Japan)
Shigeo Fujita, Kyoto Univ. (Japan)

Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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