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Proceedings Paper

Cold to hot electron transition devices
Author(s): Chun-Yen Chang
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Paper Abstract

A MBE grown negative differential resistance transistor using n(+)-i-p(+)-i-n(+) structure are presented. The peak-to-valley current ratios (PVRs), peak current densities, and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with V(BE)

Paper Details

Date Published: 1 February 1991
PDF: 6 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.48061
Show Author Affiliations
Chun-Yen Chang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications

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