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Proceedings Paper

Temperature dependence of insertion loss and bias drift of Ti:LiNbO3 optical external modulator
Author(s): Hyung-Do Yoon; Woo-Seok Yang; Han-Young Lee; Dae-Won Yoon
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Paper Abstract

Device performance of Ti:LiNbO3 10Gbps intensity modulator and 5Gbps phase modulator has been measured over various temperature in terms of insertion loss and bias drift voltage. Insertion loss and DC bias drift changed by 0.4dB and 0.45V, respectively, whether RF&DC port is open or short.

Paper Details

Date Published: 23 August 2002
PDF: 3 pages
Proc. SPIE 4906, Optical Components and Transmission Systems, (23 August 2002); doi: 10.1117/12.480578
Show Author Affiliations
Hyung-Do Yoon, Korea Electronics Technology Institute (South Korea)
Woo-Seok Yang, Korea Electronics Technology Institute (South Korea)
Han-Young Lee, Korea Electronics Technology Institute (South Korea)
Dae-Won Yoon, Korea Electronics Technology Institute (South Korea)


Published in SPIE Proceedings Vol. 4906:
Optical Components and Transmission Systems
WeiSheng Hu; Shoichi Sudo; Peter Kaiser, Editor(s)

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