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Proceedings Paper

GaInNAsSb long-wavelength lasers on GaAs
Author(s): James S. Harris
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Paper Abstract

Dilute nitride GaInNAs alloys grown on GaAs have quickly become excellent candidate materials for lower cost 1.3μm vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers. Despite the relative immaturity and challenges of this new materials system the results have been very promising. The major remaining challenges include the limited solubility of nitrogen in GaAs, non-radiative defects that may be caused by nitrogen incorporation, and phase segregation at high In compositions. A new component, Sb, has been added in order to improve epitaxial growth and optical properties at wavelengths longer than 1.3μm. By adding Sb to the alloy, luminescence has been greatly enhanced between 1.3-1.6μm where normally poor quality material results. Lasers fabricated from this new pentenary alloy have produced the lowest threshold lasers operating beyond 1.4μm on GaAs. Progress and the remaining challenges of this materials system are described.

Paper Details

Date Published: 3 July 2003
PDF: 12 pages
Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.480184
Show Author Affiliations
James S. Harris, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 4995:
Novel In-Plane Semiconductor Lasers II
Claire F. Gmachl; David P. Bour, Editor(s)

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