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Proceedings Paper

GaInN light-emitting diodes with omnidirectional reflectors
Author(s): Thomas Gessmann; Yun-Li Li; E. Fred Schubert; John W. Graff; J. K. Sheu
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Paper Abstract

A high-reflectivity omni directional reflector (ODR) has been incorporated into a GaInN light-emitting diode (LED) structure. The ODR comprises a transparent, electrically conductive quarter-wave layer of indium tin oxide clad by silver and serves as an ohmic contact to p-type GaN. It is shown that ODR-LEDs have low optical losses and high extraction efficiency. Mesa-structure GaInN/GaN ODR-LEDs emitting in the blue wavelength range are demonstrated and compared to GaInN/GaN LEDs with semitransparent Ni/Au top contacts. The extraction efficiency of ODR-LEDs is higher as compared to conventional LEDs with Ni/Au contacts.

Paper Details

Date Published: 3 July 2003
PDF: 6 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.479771
Show Author Affiliations
Thomas Gessmann, Rensselaer Polytechnic Institute (United States)
Yun-Li Li, Rensselaer Polytechnic Institute (United States)
E. Fred Schubert, Rensselaer Polytechnic Institute (United States)
John W. Graff, Boston Univ. (United States)
J. K. Sheu, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; H. Walter Yao; Kurt J. Linden; Daniel J. McGraw, Editor(s)

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