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Proceedings Paper

AlGaInP light-emitting diodes with omnidirectionally reflecting submount
Author(s): Thomas Gessmann; E. Fred Schubert; John W. Graff; Klaus P. Streubel
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Paper Abstract

A novel AlGaInP light-emitting diode (LED) is presented that employs high-reflectivity omni-directional reflector (ODR) submounts. It is shown that the reflective-submount (RS) LED has a higher light-extraction efficiency than conventional LEDs. Red AlGaInP RS-LEDs bonded to Si-substrates are demonstrated using a silver-based ODR. The ODR is perforated by an array of small-area low-resistance ohmic contacts. The optical and electrical characteristics of the RS-LEDs are presented and compared to conventional AlGaInP absorbing substrates (AS) LEDs with distributed Bragg reflectors (DBR). It is shown that the light output from the RS-LED exceeds that of AS-LEDs by about a factor of two.

Paper Details

Date Published: 3 July 2003
PDF: 14 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.479770
Show Author Affiliations
Thomas Gessmann, Rensselaer Polytechnic Institute (United States)
E. Fred Schubert, Rensselaer Polytechnic Institute (United States)
John W. Graff, Boston Univ. (United States)
Klaus P. Streubel, OSRAM Opto Semiconductors GmbH & Co. (Germany)


Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; H. Walter Yao; Kurt J. Linden; Daniel J. McGraw, Editor(s)

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