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Proceedings Paper

High-power AlGaInN lasers for Blu-ray disc system
Author(s): Motonubu Takeya; Shinroh Ikeda; Tomomi Sasaki; Tsuyoshi Fujimoto; Yoshio Ohfuji; Takashi Mizuno; Kenji Oikawa; Yoshifumi Yabuki; Shiro Uchida; Masao Ikeda
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Paper Abstract

This paper describes an improved laser structure for AlGaInN based blue-violet lasers (BV-LDs). The design realizes a small beam divergence angle perpendicular to the junction plane and high characteristic temperature wihtout significant increase in threshold current density (Jth) by optimizing the position of the Mg-doped layer and introducing an undoped AlGaN layer between the active layer and the Mg-doped electron-blocking layer. The mean time to failure (MTTF) of devices based on this design was found to be closely related to the dislocation density of ELO-GaN basal layer. Under 50 mW CW operation at 70°C, a MTTF of over 5000 h was realized whenthe dark spot density (indicative of dislocation density) is less than ~5×106 cm-2. Power consumption under 50mW CW operation at 70°C was approximately 0.33 W, independent of the dislocation density.

Paper Details

Date Published: 3 July 2003
PDF: 6 pages
Proc. SPIE 4995, Novel In-Plane Semiconductor Lasers II, (3 July 2003); doi: 10.1117/12.479758
Show Author Affiliations
Motonubu Takeya, Sony Shiroishi Semiconductor, Inc. (Japan)
Shinroh Ikeda, Sony Shiroishi Semiconductor, Inc. (Japan)
Tomomi Sasaki, Sony Shiroishi Semiconductor, Inc. (Japan)
Tsuyoshi Fujimoto, Sony Shiroishi Semiconductor, Inc. (Japan)
Yoshio Ohfuji, Sony Shiroishi Semiconductor, Inc. (Japan)
Takashi Mizuno, Sony Shiroishi Semiconductor, Inc. (Japan)
Kenji Oikawa, Sony Shiroishi Semiconductor, Inc. (Japan)
Yoshifumi Yabuki, Sony Shiroishi Semiconductor, Inc. (Japan)
Shiro Uchida, Sony Shiroishi Semiconductor, Inc. (Japan)
Masao Ikeda, Sony Shiroishi Semiconductor, Inc. (Japan)


Published in SPIE Proceedings Vol. 4995:
Novel In-Plane Semiconductor Lasers II
Claire F. Gmachl; David P. Bour, Editor(s)

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