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Proceedings Paper

Virtual bands model in porous silicon
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Paper Abstract

Several models were presented in literature to explain the photoluminescence of porous silicon, suggesting carriers originate in Si nano-structure and recombine on the surface. None of the models have a clear justification on such carriers generation and carriers dynamics with respect to the mass conservation law, since the carriers are known to originate in one place and recombine in other. In this investigation a qualitative model, namely, the Virtual Band Model (VBM) is proposed to fill in the gabs which are raised in literature.

Paper Details

Date Published: 16 August 2002
PDF: 3 pages
Proc. SPIE 4775, Modeling and Characterization of Light Sources, (16 August 2002); doi: 10.1117/12.479650
Show Author Affiliations
Bassam Alfeeli, Kuwait Institute for Scientific Research (Kuwait)
Khaled J. Habib, Kuwait Institute for Scientific Research (Kuwait)


Published in SPIE Proceedings Vol. 4775:
Modeling and Characterization of Light Sources
C. Benjamin Wooley, Editor(s)

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