Share Email Print
cover

Proceedings Paper

High-frequency modulation of twin-stripe semiconductor lasers
Author(s): Edeltraud Gehrig; Nicoletta Gaciu; Markus Pessa; Ortwin G. Hess
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Generally, the high-speed modulation dynamics ofsemiconductor lasers is determined by a complex interplay of ultrafast light-field and carrier dynamics with characteristic times-scales of inter- or intraband relaxation and scattering. Those determine the relaxation oscillations and set an upper limit to the modulation ofa single-mode semiconductor laser (cut-off frequency). In spatially extended semiconductor lasers, however, the longitudinal and transverse dimensions enable the coexistence ofnumerous longitudinal and transverse modes. With suitable resonator design allowing segmented contact carrier injection and modulation it should thus be possible to directly influence the lateral coupling and transverse mode dynamics ofa given laser structure and modulate the laser with a beat frequency associated with these modes. In this paper, we present results ofsimulations of high-frequency modulation characteristics oftwin-stripe semiconductor lasers. We show that the lateral segmentation of the contact may with proper asymmetric application of the injection current, indeed, lead to a more than five-fold increase of the modulation band-width. Our theory on the basis of multi-mode Maxwell Bloch equations includes propagation effects and spatiotemporally varying mode competition. Numerical simulations show that the increased high-speed modulation is closely associated with the coupled lateral and longitudinal multi-mode dynamics of the laser.

Paper Details

Date Published: 25 July 2003
PDF: 9 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.479633
Show Author Affiliations
Edeltraud Gehrig, DLR (Germany)
Nicoletta Gaciu, DLR (Germany)
Markus Pessa, Tampere Univ. of Technology (Finland)
Ortwin G. Hess, DLR (Germany)
Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

© SPIE. Terms of Use
Back to Top