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Proceedings Paper

Optoelectronic investigation of novel PbSrSe thin films for midinfrared device applications
Author(s): W. Z. Shen
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Paper Abstract

We review our recently combined study of temperature-dependent photoluminescence, absorption, and photocurrent measurements with theoretical models on PbSrSe thin films grown by molecular beam epitaxy for the key properties of PbSrSe thin films and their microstructures. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSrSe/PbSe multiple quantum well (MQW) mid-infrared laser systems, which opens the way for the design of IV-VI MQW mid-infrared lasers. The infrared detection of PbSrSe thin films has also been demonstrated at different temperatures, where the spectral intensity and wavelength coverage are determined by the band gap and the film thickness.

Paper Details

Date Published: 1 July 2003
PDF: 11 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479626
Show Author Affiliations
W. Z. Shen, Shanghai Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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