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Proceedings Paper

Charge and spin functionality in wide bandgap oxides
Author(s): David P. Norton; Young-Woo Heo; Stephen J. Pearton; Arthur F. Hebard; Nikoleta Theodoropoulou; Lynn A. Boatner; John D. Budai; Y. D. Park; R. G. Wilson
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Paper Abstract

In recent years, significant interest has emerged in the synthesis of magnetically-doped semiconductors. For computing, these materials provide a venue to exploit spin for computation. Direct bandgap spin-doped semiconductors are potential sources for polarized optical emission. In addition, quantum-entangled spins have been proposed as mediators in photon-based quantum communication schemes. In this paper, we discuss the properties of spin-doped ZnO. Mn-doped ZnO demonstrates ferromagnetism at relatively high temperatures as evidenced in hysteretic behavior in the magnetic flux versus field behavior. Transition metal doping was explored via ion implantation. Investigations of group V doping for p-type conduction are also discussed.

Paper Details

Date Published: 1 July 2003
PDF: 12 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479612
Show Author Affiliations
David P. Norton, Univ. of Florida (United States)
Young-Woo Heo, Univ. of Florida (United States)
Stephen J. Pearton, Univ. of Florida (United States)
Arthur F. Hebard, Univ. of Florida (United States)
Nikoleta Theodoropoulou, Univ. of Florida (United States)
Lynn A. Boatner, Oak Ridge National Lab. (United States)
John D. Budai, Oak Ridge National Lab. (United States)
Y. D. Park, Seoul National Univ. (South Korea)
R. G. Wilson, Consultant (United States)

Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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