Share Email Print
cover

Proceedings Paper

Sensing terahertz signals with III-V quantum nanostructures
Author(s): Hideki Hasegawa; Seiya Kasai
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The present status and future prospects of compound semiconductor quantum nanostructures for sensing terahertz (THz) signals are reviewed. Various THz detectors reported in recent publications are reviewed first. They include infrared photodetectors based on quantum wells, superlattices and quantum dots, resonant tunneling diodes, single electron transistors and plasma resonators using high mobility electron transistor structures. Then, a novel approach by the authors utilizing planar arrays of quantum dots controlled by nano-scale Schottky wrap gates is presented and discussed. It is based on photon assisted resonant tunneling of single electrons. The novel device structure allows normal incidence of THz radiation as well as high density planar integration. A large responsivity of 0.3 A/W was obtained at 20 K for 2.5 THz laser beam.

Paper Details

Date Published: 1 July 2003
PDF: 10 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479611
Show Author Affiliations
Hideki Hasegawa, Research Ctr. for Integrated Quantum Electronics (Japan)
Hokkaido Univ. (Japan)
Seiya Kasai, Research Ctr. for Integrated Quantum Electronics (Japan)
Hokkaido Univ. (Japan)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top