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Proceedings Paper

Tunnel barrier formation in carbon nanotubes for quantum dot devices
Author(s): Koji Ishibashi; Masaki Suzuki; Daiju Tsuya; Yoshinobu Aoyagi
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Paper Abstract

Our effort to form reliable tunnel barriers in single and multi-wall carbon nanotubes is presented. As well as the standard method which uses a simple deposition of contact metal on nanotubes, we use a narrow SiO2 deposition and Ar ion beam irradiation to form the tunnel barrier in nanotubes. Such devices as a single electron transistor, double coupled quantum dots and a single electron inverter have been fabricated. Their performance has been measured from 20 mK up to liquid helium temperature. The unique microwave response of coupled quantum dots is also presented. We show that the carbon nanotubes are attractive material for the building block of quantum-dot based nanodevices with extremely small dimensions, and our method may be useful to realize the devices and cirucits.

Paper Details

Date Published: 1 July 2003
PDF: 7 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.479603
Show Author Affiliations
Koji Ishibashi, RIKEN-Institute of Physical and Chemical Research (Japan)
Masaki Suzuki, RIKEN-Institute of Physical and Chemical Research (Japan)
Chiba Univ. (Japan)
Daiju Tsuya, RIKEN-Institute of Physical and Chemical Research (Japan)
Chiba Univ. (Japan)
Yoshinobu Aoyagi, RIKEN-The Institute of Physical and Chemical Research (Japan)
Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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