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Proceedings Paper

Femtosecond laser micromachining of silicon for MEMS
Author(s): Mohammed El-Bandrawy; Mool C. Gupta
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Paper Abstract

Laser micromachining of n-type silicon wafer was studied using femtosecond laser operating at 400 and 800 nm wavelengths. The fundamental wavelength was used to fabricate a diaphragm of 4 mm diameter using a computer controlled galvo head. The laser pulsewidth was 110 fs, repetition rate of 1 kHz, and maximum average power of 2 W. The experiments were done in air and in vacuum environment. The samples were examined with optical microscope and surface profilometer. Experiments were also done with doubling the laser beam frequency using LBO crystal to get 400 nm wavelength. Using a 10 nm resolution stage, high numerical aperture microscope objective, we were able to fabricate 235 nm wide lines with 600 nm depth.

Paper Details

Date Published: 17 October 2003
PDF: 7 pages
Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.479556
Show Author Affiliations
Mohammed El-Bandrawy, Old Dominion Univ. (United States)
Mool C. Gupta, Old Dominion Univ. (United States)


Published in SPIE Proceedings Vol. 4977:
Photon Processing in Microelectronics and Photonics II
Alberto Piqué; Koji Sugioka; Peter R. Herman; Jim Fieret; David B. Geohegan; Frank Träger; Kouichi Murakami; Friedrich G. Bachmann; Jan J. Dubowski; Willem Hoving; Kunihiko Washio, Editor(s)

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