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Proceedings Paper

Large electric-field-induced electron drift velocity observed in InxGal-xAs-based p-i-n semiconductor nanostructures
Author(s): W. Liang; Kong-Thon F. Tsen; Meng-Chyi Wu; Chong-Long Ho; Wen-Jeng Ho
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Paper Abstract

Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger Γ to X (L) energy separations in InxGa1-xxAs-based semiconductor nanostructures.

Paper Details

Date Published: 30 May 2003
PDF: 6 pages
Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.479506
Show Author Affiliations
W. Liang, Arizona State Univ. (United States)
Kong-Thon F. Tsen, Arizona State Univ. (United States)
Meng-Chyi Wu, National Tsing-Hua Univ. (Taiwan)
Chong-Long Ho, Chunghwa Telecom Co., Ltd. (Taiwan)
Wen-Jeng Ho, Chunghwa Telecom Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 4992:
Ultrafast Phenomena in Semiconductors VII
Kong-Thon F. Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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