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Proceedings Paper

GaAs/AIAs-oxide omnidirectional reflector
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Paper Abstract

We introduce a compound semiconductor based omnidirectional reflector. A four layer pair stack of GaAs/AlAs was grown epitaxially using molecular beam epitaxy, which was then converted to a GaAs/Al2O3 multilayer stack by selective oxidation of the AlAs layers. The resultant one-dimensional photonic crystal exhibited omnidirectional reflection properties in near infrared wavelength range below 1μm. Reflectance spectra measured at various incidence angles and polarizations were observed to be in good agreements with theoretically simulated results.

Paper Details

Date Published: 9 July 2003
PDF: 5 pages
Proc. SPIE 5000, Photonic Crystal Materials and Devices, (9 July 2003); doi: 10.1117/12.479485
Show Author Affiliations
Yeonsang Park, Seoul National Univ. (South Korea)
Young-Geun Roh, Seoul National Univ. (South Korea)
Heonsu Jeon, Seoul National Univ. (South Korea)


Published in SPIE Proceedings Vol. 5000:
Photonic Crystal Materials and Devices
Ali Adibi; Axel Scherer; Shawn Yu Lin, Editor(s)

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