Share Email Print
cover

Proceedings Paper

Gain and luminescence modeling for high-power laser applications
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.

Paper Details

Date Published: 19 June 2003
PDF: 5 pages
Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); doi: 10.1117/12.479438
Show Author Affiliations
Joerg Hader, Univ. of Arizona (United States)
Optical Sciences Ctr./Univ. of Arizona (United States)
Aramais R. Zakharian, Univ. of Arizona (United States)
Optical Sciences Ctr./Univ. of Arizona (United States)
Jerome V. Moloney, Univ. of Arizona (United States)
Optical Sciences Ctr./Univ. of Arizona (United States)
Thomas R. Nelson, Air Force Research Lab. (United States)
James E. Ehret, Air Force Research Lab. (United States)
Stephan W. Koch, Philipps-Univ. Marburg (Germany)


Published in SPIE Proceedings Vol. 4993:
High-Power Fiber and Semiconductor Lasers
Mahmoud Fallahi; Jerome V. Moloney, Editor(s)

© SPIE. Terms of Use
Back to Top