Share Email Print
cover

Proceedings Paper

Modeling electrical characteristics of laser tuned silicon microdevices
Author(s): Michel Meunier; Mathieu Ducharme; Jean-Sebastien Bernier
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Highly accurate resistances can be made by iteratively laser inducing local diffusion of dopants from the drain and source of a gateless field effect transistor into its channel, thereby forming an electrical link between two adjacent p-n junction diodes. These laser tuned microdevices have been electrically characterized and their current-voltage (I-V) behaviors are linear at low voltages and sublinear at higher voltages where carrier mobility is affected by the presence of high fields. Considering that the microdevice is a one dimensional trap less n+ υ n+ structure, we have developed a theoretical current-voltage equation that satisfies these experimental results.

Paper Details

Date Published: 17 October 2003
PDF: 5 pages
Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.479412
Show Author Affiliations
Michel Meunier, Ecole Polytechnique de Montreal (Canada)
Mathieu Ducharme, Ecole Polytechnique de Montreal (Canada)
Jean-Sebastien Bernier, Ecole Polytechnique de Montreal (Canada)


Published in SPIE Proceedings Vol. 4977:
Photon Processing in Microelectronics and Photonics II
Alberto Piqué; Koji Sugioka; Peter R. Herman; Jim Fieret; David B. Geohegan; Frank Träger; Kouichi Murakami; Friedrich G. Bachmann; Jan J. Dubowski; Willem Hoving; Kunihiko Washio, Editor(s)

© SPIE. Terms of Use
Back to Top