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Proceedings Paper

Plasma etch of Cr masks utilizing TCP source for a next-generation plasma source
Author(s): Hyuk-Joo Kwon; Dong-Soo Min; Pil-Jin Jang; Byung-Soo Chang; Boo-Yeon Choi; Soo-Hong Jeong
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Paper Abstract

In the photomask manufacturing, dry etch process is one of important process and the etch process mainly affects CD uniformity, skew, and Cr slope. We will present newly developed dry etcher system using TCP (transformer coupled plasma) source and its Cr etch performance. We will investigate the performance of TCP source for the uniformity, linearity, and loading effects. CD uniformity of 0.8 um Cr space pattern at 11 x 11 arrays with 135 x 135 mm2 area is below 8 nm and 15 nm in 3 sigma in case of ZEP7000 and IP3500 as resists, respectively. The skew (ASI - ADI) linearity of clear and dark CDs from 0.4 um to 2 um is below 35 nm in case of IP3500. The Cr loading characteristics of TCP source is investigated and the etch process parameter dependence on the loading is verified.

Paper Details

Date Published: 16 August 2002
PDF: 6 pages
Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479363
Show Author Affiliations
Hyuk-Joo Kwon, PKL Corp. (South Korea)
Dong-Soo Min, PKL Corp. (South Korea)
Pil-Jin Jang, PKL Corp. (South Korea)
Byung-Soo Chang, PKL Corp. (South Korea)
Boo-Yeon Choi, PKL Corp. (South Korea)
Soo-Hong Jeong, PKL Corp. (South Korea)

Published in SPIE Proceedings Vol. 4764:
18th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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