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Proceedings Paper

Measures to achieve 20nm IPL stencil mask distortion
Author(s): Ernst Haugeneder; A. Chalupka; T Lammer; Hans Loeschner; Frank-Michael Kamm; Thomas Struck; Albrecht Ehrmann; Rainer Kaesmaier; Andreas Wolter; Joerg Butschke; Mathias Irmscher; Florian Letzkus; Reinhard Springer
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Paper Abstract

From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. These are mainly magnification and anamorphic corrections removing so-called global distortions. The remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (THEMA).

Paper Details

Date Published: 16 August 2002
PDF: 9 pages
Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479353
Show Author Affiliations
Ernst Haugeneder, IMS Nanofabrication GmbH (Austria)
A. Chalupka, IMS Nanofabrication GmbH (Austria)
T Lammer, IMS Nanofabrication GmbH (Austria)
Hans Loeschner, IMS Nanofabrication GmbH (Austria)
Frank-Michael Kamm, Infineon Technologies AG (Germany)
Thomas Struck, Infineon Technologies AG (Germany)
Albrecht Ehrmann, Infineon Technologies AG (Germany)
Rainer Kaesmaier, Infineon Technologies AG (Germany)
Andreas Wolter, Infineon Technologies AG (Germany)
Joerg Butschke, Institut fuer Mikroelektronik Stuttgart (Germany)
Mathias Irmscher, Institut fuer Mikroelektronik Stuttgart (Germany)
Florian Letzkus, Institut fuer Mikroelektronik Stuttgart (Germany)
Reinhard Springer, Institut fuer Mikroelektronik Stuttgart (Germany)

Published in SPIE Proceedings Vol. 4764:
18th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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