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Proceedings Paper

Mask availability for next-generation lithography
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Paper Abstract

The Next Generation Lithography (NGL) Mask Center of Competency (MCoC) has been developing mask technology to support all of the major next generation lithographies for several years. Cross-cutting process development has been applied to generate progress in both the membrane and reflective mask formats. The mask technology has been developed to early capability stage for all of the mask formats. Proximity x-ray masks, although only for certain niche applications, are a very developed mask format. This information has been used to produce electron beam projection masks, in both continuous membrane and stencil formats, and extreme ultraviolet lithography masks. In this paper, we discuss the status of the lithography technology development and the obstacles that remain between the current early development capability and the availability for manufacturing.

Paper Details

Date Published: 16 August 2002
PDF: 5 pages
Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479342
Show Author Affiliations
Michael J. Lercel, Photronics, Inc. (USA) and IBM (United States)
Emily Fisch, Photronics, Inc. (USA) and IBM (United States)
Kenneth C. Racette, Photronics, Inc. (USA) and IBM (United States)
Mark Lawliss, Photronics, Inc. (USA) and IBM (United States)
Carey T. Williams, Photronics, Inc. (USA) and IBM (United States)
Louis Kindt, Photronics, Inc. (USA) and IBM (United States)
Chester Huang, Photronics, Inc. (USA) and IBM (United States)


Published in SPIE Proceedings Vol. 4764:
18th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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