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Proceedings Paper

Feasibility study of manufacturing process and quality control for the new alternating PSM structure
Author(s): Yasutaka Morikawa; Haruo Kokubo; Masaharu Nishiguchi; Masami Nara; Yousuke Totsu; Morihisa Hoga; Naoya Hayashi
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Paper Abstract

Alternating phase-shifting mask (Alt.PSM) technology is the most effective approach to expand resolution limitation and expand the process window of lithography. Currently, etched quartz Alt.PSMs have been introduced not only for device development but also for production use. We have been supplying Alt.PSMs with Single trench + Undercut structures for the mass-production of KrF lithography and reported this structure is applicable for ArF lithography. (*1,2,3) On the other hand, we have introduced preliminary manufacturing results of the new Alt.PSM structure. (*3) This structure has the advantages, which are exempted from biasing issues and narrow chrome width limitations. (*4) In order to make sure the adaptability of this new Alt.PSM structure in mass-manufacturing, we started to investigate productivity for this structure. In this report, we will discuss about the feasibility study of manufacturing process and quality control which include CD performance results, alignment error tolerance evaluations and defect assurance evaluations.

Paper Details

Date Published: 16 August 2002
PDF: 11 pages
Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479337
Show Author Affiliations
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Haruo Kokubo, Dai Nippon Printing Co., Ltd. (Japan)
Masaharu Nishiguchi, Dai Nippon Printing Co., Ltd. (Japan)
Masami Nara, Dai Nippon Printing Co., Ltd. (Japan)
Yousuke Totsu, Dai Nippon Printing Co., Ltd. (Japan)
Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4764:
18th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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