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Proceedings Paper

Printability of hard and soft defects in 193-nm lithography
Author(s): Vicky Philipsen; Rik M. Jonckheere; Stephanie Kohlpoth; Christoph M. Friedrich; Juan Andres Torres
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Paper Abstract

A systematic attempt has been undertaken to investigate the printability of mask defects for 100nm lithography using 193nm wavelength. The main purpose is the study of soft defects (particles), but hard defects have been taken as a reference. A reticle is designed with programmed soft and chrome defects in cells with different densities. As soft defects resist dots are used. Printability is first assessed by simulation, using ProLith v7.0. Wafers are printed using QUASAR illumination and evaluated by a CD SEM. We demonstrate that aerial image simulations and AIS measurements can predict the qualitative trends in defect printability. A thorough quantitative analysis is presented.

Paper Details

Date Published: 16 August 2002
PDF: 17 pages
Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); doi: 10.1117/12.479336
Show Author Affiliations
Vicky Philipsen, IMEC (Belgium)
Rik M. Jonckheere, IMEC (Belgium)
Stephanie Kohlpoth, Infineon Technologies AG (Germany)
Christoph M. Friedrich, Infineon Technologies AG (Germany)
Juan Andres Torres, ASML MaskTools (United States)

Published in SPIE Proceedings Vol. 4764:
18th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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