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Proceedings Paper

Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon
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Paper Abstract

A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is ~ 0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.

Paper Details

Date Published: 17 June 2003
PDF: 6 pages
Proc. SPIE 4968, Solid State Lasers XII, (17 June 2003); doi: 10.1117/12.478952
Show Author Affiliations
Todd W. Du Bosq, Univ. of Central Florida (United States)
Robert E. Peale, Univ. of Central Florida (United States)
Eric W. Nelson, Univ. of Central Florida (United States)
Andrei V. Muravjov, Univ. of Central Florida (United States)
Chris J. Fredricksen, Zaubertek, Inc. (United States)


Published in SPIE Proceedings Vol. 4968:
Solid State Lasers XII
Richard Scheps, Editor(s)

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