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Proceedings Paper

Improved HgCdTe technology for high-performance infrared detectors
Author(s): Johann Ziegler; Martin Bruder; Wolfgang A. Cabanski; Heinrich Figgemeier; Marcus Finck; Peter Menger; Thomas Simon; Richard Wollrab
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Paper Abstract

To meet the demands for high performance HgCdTe detectors at high yield and producibility, key processes have been optimized and new approaches have been developed. By a superior CdZnTe Bridgman growth process, dislocation densities <1x105cm-2 in substrate and epitaxial layer are achieved for all substrates, ensuring high performance Focal-Plane-Arrays, particularly for (lambda) CO=11,5 micrometers arrays. A new guard ring approach for planar diodes, created by a n+-region in pixel spacing area reduces pixel crosstalk and improves Modulation Transfer Function. For high thermal cycles of the FPA, the flip-chip- technique has been optimized, leading to >2000 cycles for 640x512-FPA's. Producibility and reliability of AIM's MCT FPA technology are demonstrated.

Paper Details

Date Published: 5 August 2002
PDF: 10 pages
Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); doi: 10.1117/12.478853
Show Author Affiliations
Johann Ziegler, AIM AEG Infrarot-Module GmbH (Germany)
Martin Bruder, AIM AEG Infrarot-Module GmbH (Germany)
Wolfgang A. Cabanski, AIM AEG Infrarot-Module GmbH (Germany)
Heinrich Figgemeier, AIM AEG Infrarot-Module GmbH (Germany)
Marcus Finck, AIM AEG Infrarot-Module GmbH (Germany)
Peter Menger, AIM AEG Infrarot-Module GmbH (Germany)
Thomas Simon, AIM AEG Infrarot-Module GmbH (Germany)
Richard Wollrab, AIM AEG Infrarot-Module GmbH (Germany)


Published in SPIE Proceedings Vol. 4721:
Infrared Detectors and Focal Plane Arrays VII
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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