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1/f noise in Hg1-xCdxTe detectors
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Paper Abstract

This paper investigates 1/f noise performance of Hg1-xCdxTe photovoltaic detectors when detector current is varied by changing detector area, bias, temperature and incident flux. Holding detector bias and temperature constant, measured 1/f noise current is proportional to the detector current. However for all detector areas measured, non-uniformity is observed in the noise current due to the varied quality of the detectors. Even for the λc=16μm , 4-μm-radius, diffusion-limited detectors at 78K held at reverse bias, the average and standard deviation in dark current is Id=9.76+/- 1.59x10-8A while the average and standard deviation in noise current at 1 Hz in a 1 Hz bandwidth is in=1.01+/- 0.63x10-12A. For all detector areas measured at 100 mV reverse bias, the average and standard deviation in dark current to noise current ratio is α D=in/Id=1.39+/- 1.09x10-5. Defects are presumed resident in the detectors that produce greater non- uniformity in the 1/f noise as compared to the dark current at 100 mV reverse bias. Noise was also measured as a function of temperature for two λ c=16 micrometers detectors from 55 K to 100 K. The average and standard deviation in the noise current to dark current ratio is αD=in/Id=2.36+/- 0.83x10-5 for the 26-micrometers -diameter detector and (alpha) D=1.71+/- 0.69x10-5 for the 16-micrometers -diameter detector. Dark and noise current were measured while changing the bias applied to a detector. In the diffusion-limited portion of the detector I-V curve, 1/f noise is independent of bias with α D=in/Id=1.51+/- 0.12x10-5. When tunneling currents dominated, αT=in/Id=5.21+/- 0.83x10-5. The 1/f noise associated with tunneling currents is a factor of three greater than the 1/f noise associated with diffusion currents. In addition, 1/f noise was measured on detectors held at -100 mV and 78 K under dark and illuminated conditions. The average noise to current ratio αD was approximately 1.5 x 10-5 for dark and photon-induced diffusion current. However, detector-to-detector variations exist even within a single chip. The two most important points are that non-uniformities in material/fabrication need to be addressed and that each individual type of current component has an associated 1/f noise current component, the magnitude of the relationship being different depending on the source current.

Paper Details

Date Published: 5 August 2002
PDF: 7 pages
Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); doi: 10.1117/12.478850
Show Author Affiliations
Arvind I. D'Souza, DRS Technologies, Inc. (United States)
Maryn G. Stapelbroek, DRS Technologies, Inc. (United States)
Stacy A. Masterjohn, DRS Technologies, Inc. (United States)
Priyalal S. Wijewarnasuriya, Rockwell Scientific Co., L.L.C. (United States)
Roger E. DeWames, Rockwell Scientific Co., L.L.C. (United States)
G. M. Williams, Rockwell Scientific Co., L.L.C. (United States)

Published in SPIE Proceedings Vol. 4721:
Infrared Detectors and Focal Plane Arrays VII
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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