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Proceedings Paper

Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers
Author(s): Yasuhito Uchiyama; Hironori Nishino; Yusuke Matsukura; Tetsuya Miyatake; Kousaku Yamamoto; Toshio Fujii
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Paper Abstract

We investigated the behavior of the dark current (Id) in quantum well infrared photodetectors (QWIPs) in which the barrier layers were selectively doped instead of the well layers. Because the selective doping bends the conduction band (CB) edge in the portion of the barrier near the interface, the mechanism by which carriers in the wells can be emitted over the barriers, i.e. thermal emission and tunneling through this portion of the barrier, could be emphasized. We first confirmed that selectively doping the barrier layers clearly affects the Id-V characteristics. Then, by evaluating the activation energy obtained from the temperature dependence of Id, we found that the Poole-Frenkel emission (PFE) mechanism and the thermal-assisted tunneling (TAT)-like mechanism are dominant in the lower bias and higher bias regions, respectively.

Paper Details

Date Published: 5 August 2002
PDF: 8 pages
Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); doi: 10.1117/12.478844
Show Author Affiliations
Yasuhito Uchiyama, Fujitsu Labs. Ltd. (Japan)
Hironori Nishino, Fujitsu Labs. Ltd. (Japan)
Yusuke Matsukura, Fujitsu Labs. Ltd. (Japan)
Tetsuya Miyatake, Fujitsu Labs. Ltd. (Japan)
Kousaku Yamamoto, Fujitsu Labs. Ltd. (Japan)
Toshio Fujii, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 4721:
Infrared Detectors and Focal Plane Arrays VII
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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