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Proceedings Paper

Thermoelectric films prepared by pulsed laser deposition
Author(s): A. Dauscher; B. Lenoir; O. Boffoue; A. Jacquot
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Paper Abstract

Thermoelectric thin films have been prepared by pulsed laser deposition (PLD) from a Nd:YAG laser. Materials include bismuth (Bi), bismuth telluride (Bi2Te3), and lead telluride (PbTe). The influence of various deposition parameters (substrate temperature, substrate nature, ...) On the achievement of high quality stoichiometric films is discussed. Results of transport property measurements (electrical resistivity, thermoelectric power, Hall coefficient) are attempted to be correlated to the film microstructure. Some particular features relevant to each materials (problems of non-congruent transfer of stoichiometry, particular thickness profiles, ...) are highlighted.

Paper Details

Date Published: 9 August 2002
PDF: 12 pages
Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478665
Show Author Affiliations
A. Dauscher, UHP-INPL/CNRS (France)
B. Lenoir, UHP-INPL/CNRS (France)
O. Boffoue, UHP-INPL/CNRS (France)
A. Jacquot, UHP-INPL/CNRS (France)


Published in SPIE Proceedings Vol. 4762:
ALT'01 International Conference on Advanced Laser Technologies

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