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Proceedings Paper

Pulsed laser deposition of films and multilayers for optoelectronic applications
Author(s): A. P. Caricato; M. Fernandez; Gilberto Leggieri; Armando Luches; Maurizio Martino; Francesco Prudenzano
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Paper Abstract

Silica, ITO, chalcogenide glass films and multilayers were deposited by excimer laser ablation deposition. Investigations show that good quality stoichiometric silica films can be deposited on substrates at room temperature by ArF laser ablation of SiO in O2 atmosphere. Surface roughness can be kept low (approximately 5 nm). Low- absorbance and low resistivity (1.6x10-6 (Omega) m, the lowest value in literature) ITO films were grown with XeCl laser pulses on substrates heated at 200 degree(s)C. Optical switches were realized with ultra-thin (6-9 nm) ITO films. Rare-earth-doped waveguides were efficiently deposited by ablating Pr3+ -doped chalcogenide glass (70%GeS2-15%Ga2S3-15%CsI-2000 ppm Pr3+) targets in vacuum (1x10-5 Pa by XeCl laser pulses.

Paper Details

Date Published: 9 August 2002
PDF: 11 pages
Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478662
Show Author Affiliations
A. P. Caricato, INFM and Univ. degli Studi di Lecce (Italy)
M. Fernandez, INFM and Univ. degli Studi di Lecce (Italy)
Gilberto Leggieri, INFM and Univ. degli Studi di Lecce (Italy)
Armando Luches, INFM and Univ. degli Studi di Lecce (Italy)
Maurizio Martino, INFM and Univ. degli Studi di Lecce (Italy)
Francesco Prudenzano, Politecnico di Bari (Italy)


Published in SPIE Proceedings Vol. 4762:
ALT'01 International Conference on Advanced Laser Technologies

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