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Proceedings Paper

Electrical conduction parameter measurements on GaAs optoelectronic structures
Author(s): V. Ciupina
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Paper Abstract

The magnetoresistance measurements have been made on the bulk- grown GaAs-n sandwich structures and on Gunn diodes without magnetic cap. The magnetoresistance mobility has been determined by measuring the variation of the active layer resistance in a low magnetic field oriented perpendicular to the electric field direction. For this purpose the metal-semiconductor contact resistance, determined from the structure resistance vs. the magnetic field intensity and the angle between the magnetic field and the electric field, has been used. The resistivity has been obtained from the active layer resistance and the sample geometry. The concentration of charge carriers has been determined from the resistivity and the Hall mobility.

Paper Details

Date Published: 9 August 2002
PDF: 4 pages
Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478652
Show Author Affiliations
V. Ciupina, Univ. of Constantza (Romania)


Published in SPIE Proceedings Vol. 4762:
ALT'01 International Conference on Advanced Laser Technologies

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