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Proceedings Paper

Laser-induced explosive boiling during nanosecond laser ablation of silicon
Author(s): Valentin Craciun; Nabil D. Bassim; Doina Craciun; Chantal Boulmer-Leborgne; Joerg Hermann; Rajiv K. Singh
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Paper Abstract

The surface morphology of single crystal (100) Si wafers irradiated by 266 nm and 1064 nm laser pulses emitted by a solid state Nd:YAG laser has been investigated. The morphology of the bottom of craters remained flat and almost featureless after 266 nm single or multipulse laser irradiation up to the maximum fluence of 18 J/cm2 used in this study. The rims of the craters showed signs of radial liquid flow but it was apparent that the vaporization process was confined to the surface region. A different morphology was observed on the bottom of the craters formed by the 1064 nm wavelength laser pulses. Because this wavelength is absorbed in volume, (alpha) <104cm-1, a rather thick liquid Si pool formed at the surface. For laser fluences higher than 3-5 J/cm2 evidence of boiling sites were observed on the bottom of the crater, especially for multipulse irradiation. An evolution of surface morphology, from waves towards deep cavity was observed with the increase of pulse number. By analyzing the cavity formation mechanisms, their density and shape, we suggest that they were induced by heterogeneous boiling and not homogeneous boiling.

Paper Details

Date Published: 9 August 2002
PDF: 7 pages
Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); doi: 10.1117/12.478637
Show Author Affiliations
Valentin Craciun, Univ. of Florida (Romania)
Nabil D. Bassim, Univ. of Florida (United States)
Doina Craciun, National Institute for Laser, Plasma, and Radiation Physics (Romania)
Chantal Boulmer-Leborgne, Univ. d'Orleans (France)
Joerg Hermann, Univ. de la Mediterranee (France)
Rajiv K. Singh, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 4762:
ALT'01 International Conference on Advanced Laser Technologies

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