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Proceedings Paper

Porous nanostructured layers on germanium produced by laser optical breakdown processing
Author(s): Andrei V. Kabashin; Vincent-Gabriel Pilon Marien; D.-Q. Yang; F. Magny; Michel Meunier
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Paper Abstract

Germanium wafer surface is modified by a technique of CO2-laser induced air breakdown processing, which was recently introduced and used to produce photoluminescent Si-based nanostructured layers. Structural and optical properties of the Ge-based layers, formed under the irradiation spot as a result of the processing, are characterized by different techniques (SEM, XPS, FTIR, XRD, and PL). It has been found that the layers present a porous structure, containing nanoscale holes, and consist of Ge nanocrystals embedded into GeO2 matrices. They exhibited strong photoluminescence (PL) in the green range (2.2 eV), which was attributed to defects in GeO2 matrix due to the presence of Ge-O modes with some OH vibration in the FTIR spectra. The layers are of importance for local patterning of nanostructures on semiconductors.

Paper Details

Date Published: 17 October 2003
PDF: 7 pages
Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.478574
Show Author Affiliations
Andrei V. Kabashin, Ecole Polytechnique de Montreal (Canada)
Vincent-Gabriel Pilon Marien, Ecole Polytechnique de Montreal (Canada)
D.-Q. Yang, Ecole Polytechnique de Montreal (Canada)
F. Magny, Ecole Polytechnique de Montreal (Canada)
Michel Meunier, Ecole Polytechnique de Montreal (Canada)

Published in SPIE Proceedings Vol. 4977:
Photon Processing in Microelectronics and Photonics II
Alberto Piqué; Koji Sugioka; Peter R. Herman; Jim Fieret; David B. Geohegan; Frank Träger; Kouichi Murakami; Friedrich G. Bachmann; Jan J. Dubowski; Willem Hoving; Kunihiko Washio, Editor(s)

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