Share Email Print
cover

Proceedings Paper

High-power diode laser bars with 19 up to 48 individually addressable emitters
Author(s): Markus Roehner; Norbert Boenig; Konstantin Boucke; Reinhart Poprawe
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The main challenge to address single emitters in a high-power diode-laser-bar is the thermal and electrical management to avoid crosstalking. Especially p-side up assembly leads to increasing thermal influence of neighbouring emitters due to the low thermal conductivity of GaAs. Electro-magnetic fields inside and outside the laser-bar, for example caused by high frequency modulation (10 MHz) at a high current (up to 1 A), induce voltages into neighbouring electric circuits, hence the output power of neighbouring emitters can be affected.

Paper Details

Date Published: 19 June 2003
PDF: 8 pages
Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); doi: 10.1117/12.478368
Show Author Affiliations
Markus Roehner, Fraunhofer-Institut für Lasertechnik (Germany)
Norbert Boenig, Fraunhofer-Institut für Lasertechnik (Germany)
Konstantin Boucke, Fraunhofer-Institut für Lasertechnik (Germany)
Reinhart Poprawe, Fraunhofer-Institut für Lasertechnik (Germany)


Published in SPIE Proceedings Vol. 4973:
High-Power Diode Laser Technology and Applications
Mark S. Zediker, Editor(s)

© SPIE. Terms of Use
Back to Top