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Proceedings Paper

High-brightness highly reliable InGaAlAs/GaAs laser bars with reduced fill factor and 60% efficiency
Author(s): Alexis Schmitt; Martin Behringer; Gerhard Herrmann; Marc Philippens; Joerg Heerlein; Johann Luft
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Paper Abstract

We have investigated high-power diode laser bars from 808 nm to 980 nm. The presentation is focussed upon the development of suitable laser bars for improved beam quality at increased output power. For better beam shaping structures with reduced fill factor of 30% were developed. They were operated in continuous wave mode at power levels of up to 60W. Moreover industrial applications require lifetimes of more than 10,000 hours. We present data yielding an extrapolated lifetime of up to 100,000 hours at 40W with 60% wall-plug efficiency at 980nm cw.

Paper Details

Date Published: 19 June 2003
PDF: 9 pages
Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); doi: 10.1117/12.478364
Show Author Affiliations
Alexis Schmitt, OSRAM Opto Semiconductors GmbH (Germany)
Martin Behringer, OSRAM Opto Semiconductors GmbH (Germany)
Gerhard Herrmann, OSRAM Opto Semiconductors GmbH (Germany)
Marc Philippens, OSRAM Opto Semiconductors GmbH (Germany)
Joerg Heerlein, OSRAM Opto Semiconductors GmbH (Germany)
Johann Luft, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 4973:
High-Power Diode Laser Technology and Applications
Mark S. Zediker, Editor(s)

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